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NCS2510 Product Preview 1.0 GHz Current Feedback Op Amp with Enable Feature
NCS2510 is a 1.0 GHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. This device features an enable pin.
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8 8 1 SO-8 D SUFFIX CASE 751 1 6 6 1 SOT23-6 (TSOP-6) SN SUFFIX CASE 318G YB1YW G 1 N2510 ALYW G
* * * * * * * * * * * * * * *
-3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp-p) 1.0 GHz Typ Slew Rate 1500 V/ms Supply Current 8.5 mA Input Referred Voltage Noise 6.0 nV/ Hz THD -60 dBc (f = 5.0 MHz, VO = 2.0 Vp-p) Output Current 150 mA Enable Pin Available Pin Compatible with AD8001 Pb-Free Packages are Available High Resolution Video Line Driver High-Speed Instrumentation Wide Dynamic Range IF Amp Set Top Box NTSC/PAL/HDTV
3 2
Gain = +2 VS = 5V RF = 400W RL = 150W
Applications
YB1, N2510 = NCS2510 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package
SO-8 PINOUT NC -IN +IN VEE 1 2 3 4 (Top View) SOT23-6 (TSOP-6) PINOUT OUT 1 + 2 3 (Top View) - 6 VCC 5 EN 4 -IN - + 8 7 6 5 EN VCC OUT NC
NORMAILIZED GAIN(dB)
1 0 -1 -2 -3
VOUT = 2.0V
-4 -5 -6 0.01
VOUT = 1.0V VOUT = 0.5V 0.1 1 10 100 FREQUENCY (MHz) 1000 10k
VEE +IN
Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2005
1
July, 2005 - Rev. P0
Publication Order Number: NCS2510/D
NCS2510
PIN FUNCTION DESCRIPTION
Pin (SO-8) 6 Pin (SOT23/SC70) 1 Symbol OUT Function Output Equivalent Circuit
VCC ESD OUT
VEE
4 3
2 3
VEE +IN
Negative Power Supply Non-inverted Input
ESD +IN VCC
ESD -IN
VEE
2 7 8
4 6 5
-IN VCC EN
Inverted Input Positive Power Supply Enable
EN
See Above
VCC ESD
VEE
1, 8
N/A
NC
No Connect
ENABLE PIN TRUTH TABLE
High Enable *Default open state
VCC
Low* Enabled
Disabled
+IN -IN
OUT
CC
VEE
Figure 2. Simplified Device Schematic
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ATTRIBUTES
Characteristics ESD Human Body Model Machine Model Charged Device Model Moisture Sensitivity (Note 2) Flammability Rating Oxygen Index: 28 to 34 Value 2.0 kV (Note 1) 200 V 1.0 kV Level 1 UL 94 V-0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and -IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter Power Supply Voltage Input Voltage Range Input Differential Voltage Range Output Current Maximum Junction Temperature (Note 3) Operating Ambient Temperature Storage Temperature Range Power Dissipation Thermal Resistance, Junction-to-Air SO-8 SOT23-6 Symbol VS VI VID IO TJ TA Tstg PD RqJA 139 121 Rating 11 vVS vVS 100 150 -40 to +85 -60 to +150 (See Graph) Unit Vdc Vdc Vdc mA C C C mW C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
1800 Maximum Power Dissapation (mW) 1600 1400 1200 SOT23 Pkg
The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the "overheated'' condition for an extended period can result in device damage. To ensure proper operation, it is important to observe the derating curves.
1000 800 600 400 200 0 -50 -25 0 25 50 75 100 Ambient Temperature (C) 125 150 SO-8 Pkg
Figure 3. Power Dissipation vs. Temperature
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AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = -5.0 V, TA = -40C to +85C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase MHz AV = +2.0, VO = 0.5 Vp-p AV = +2.0, VO = 2.0 Vp-p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz 1000 450 120 0.01 0.01 MHz %
GF0.1dB dG dP
TIME DOMAIN RESPONSE SR ts Slew Rate Settling Time 0.01% 0.1% Rise and Fall Time Turn-on Time Turn-off Time AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V (10%-90%) AV = +2.0, Vstep = 2.0 V 1500 9.0 7.0 1.5 55 55 ns ns ns V/ms ns
tr tf tON tOFF
HARMONIC/NOISE PERFORMANCE THD HD2 HD3 IP3 SFDR eN iN Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third-Order Intercept Spurious-Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 2.0 Vp-p f = 5.0 MHz, VO = 2.0 Vp-p f = 5.0 MHz, VO = 2.0 Vp-p f = 10 MHz, VO = 1.0 Vp-p f = 5.0 MHz, VO = 2.0 Vp-p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non-Inverting -60 -62 -66 34 55 6.0 10 3.0 dBc dBc dBc dBm dBc
nV pA
Hz Hz
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DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = -5.0 V, TA = -40C to +85C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT VIH VIL Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 4) Input Low Voltage (Enable) (Note 4) +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V (Note 4) +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V 2.5 -2.5 -5.0 0 6.0 "3.0 "6.0 +40 -10 +5.0 mV mV/C mA nA/C V V
INPUT CHARACTERISTICS VCM CMRR RIN CIN Input Common Mode Voltage Range Common Mode Rejection Ratio Input Resistance Differential Input Capacitance (See Graph) +Input (Non-Inverting) -Input (Inverting) "3.0 55 100 50 1.0 V dB kW W pF
OUTPUT CHARACTERISTICS ROUT VO IO Output Resistance Output Voltage Range Output Current "90 0.1 "3.0 "120 W V mA
POWER SUPPLY VS IS,ON IS,OFF PSRR Operating Voltage Supply Range Power Supply Current - Enabled Power Supply Current - Disabled Power Supply Rejection Ratio VO = 0 V VO = 0 V (See Graph) 10 8.5 0.11 60 V mA mA dB
4. Guaranteed by design and/or characterization.
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AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = -2.5 V, TA = -40C to +85C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase MHz AV = +2.0, VO = 0.5 Vp-p AV = +2.0, VO = 1.0 Vp-p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz 600 300 100 0.01 0.01 MHz %
GF0.1dB dG dP
TIME DOMAIN RESPONSE SR ts Slew Rate Settling Time 0.01% 0.1% Rise and Fall Time Turn-on Time Turn-off Time AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V (10%-90%) AV = +2.0, Vstep = 1.0 V 1000 12 9.0 2.0 55 55 ns ns ns V/ms ns
tr tf tON tOFF
HARMONIC/NOISE PERFORMANCE THD HD2 HD3 IP3 SFDR eN iN Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third-Order Intercept Spurious-Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 1.0 Vp-p f = 5.0 MHz, VO = 1.0 Vp-p f = 5.0 MHz, VO = 1.0 Vp-p f = 10 MHz, VO = .5 Vp-p f = 5.0 MHz, VO = 1.0 Vp-p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non-Inverting -60 -62 -66 28 55 6.0 10 3.0 dBc dBc dBc dBm dBc
nV pA
Hz Hz
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DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = -2.5 V, TA = -40C to +85C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified).
Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT VIH VIL Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 5) Input Low Voltage (Enable) (Note 5) +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V (Note 5) +Input (Non-Inverting), VO = 0 V -Input (Inverting), VO = 0 V 1.875 -1.875 -5.0 0 6.0 "3.0 "6.0 +40 -10 +5.0 mV mV/C mA nA/C V V
INPUT CHARACTERISTICS VCM CMRR RIN CIN Input Common Mode Voltage Range Common Mode Rejection Ratio Input Resistance Differential Input Capacitance (See Graph) +Input (Non-Inverting) -Input (Inverting) "1.0 55 100 50 1.0 V dB kW W pF
OUTPUT CHARACTERISTICS ROUT VO IO Output Resistance Output Voltage Range Output Current "90 0.1 "1.2 "120 W V mA
POWER SUPPLY VS IS,ON IS,OFF PSRR Operating Voltage Supply Range Power Supply Current - Enabled Power Supply Current - Disabled Power Supply Rejection Ratio VO = 0 V VO = 0 V (See Graph) 5.0 8.0 0.09 60 V mA mA dB
5. Guaranteed by design and/or characterization.
VIN
+ -
VOUT
RF RF
RL
Figure 4. Typical Test Setup (AV = +2.0, RF = 400 W, RL = 150 W)
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3 2 NORMAILIZED GAIN(dB) NORMAILIZED GAIN(dB) 1 0 -1 -2 -3 -4 -5 -6 0.01 Gain = +2 VS = 5V RF = 400W RL = 150W 0.1 VOUT = 2.0V 5 4 3 2 1 0 -1 -2 -3 -4 1000 10k Gain = +2 VS = 5V RF = 400W RL = 150W 0.1 VOUT = 2.0V VOUT = 1.0V VOUT = 0.5V 1 10 100 FREQUENCY (MHz) 1000 10k
VOUT = 1.0V
VOUT = 0.5V 1 10 100 FREQUENCY (MHz)
-5 0.01
Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0
Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0
3 2 NORMAILIZED GAIN(dB) NORMAILIZED GAIN(dB) 1 0 -1 -2 -3 -4 -5 Gain = +2 VS = 5V VOUT = 2V RF = 400W RL = 150W 0.1 1 10 100 FREQUENCY (MHz) 1000 10k
5 4 3 2 1 0 -1 -2 -3 -4 -5 0.01 VS = 5V VOUT = 0.5V RF = 400W RL = 150W 0.1 1 10 100 FREQUENCY (MHz) 1000 10k Gain = +2 Gain = +1
-6 0.01
Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency
VS = 5V
Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency
VS = 5V
Figure 9. Small Signal Step Response Vertical: 1V/div Horizontal: 10ns/div
Figure 10. Large Signal Step Response Vertical: 2V/div Horizontal: 10ns/div
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0.03 DIFFERENTIAL PHASE () DIFFERENTIAL GAIN (%) 0.02 0.01 0 VS = 5V RL = 150W Gain = +2 3.58MHz 4.43MHz 10MHz 20MHz 50MHz 0.02 0.015 0.01 0.005 0 3.58MHz 4.43MHz 10MHz 20MHz 50MHz
-0.01 -0.02 -0.03 -0.8
-0.005 -0.01 VS = 5V RL = 150W Gain = +2 -0.6 0.2 0.4 -0.4 -0.2 0 OFFSET VOLTAGE (V) 0.6 0.8
-0.015 -0.6 0.2 0.4 -0.4 -0.2 0 OFFSET VOLTAGE (V) 0.6 0.8
-0.02 -0.8
Figure 11. Differential Gain
11 10.5 85C 10 9.5 9 8.5 8 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 -40C 25C CURRENT (mA) CURRENT (mA) 0.13 0.125 0.12 0.115 0.11 0.105 0.1 0.095 0.09 0.085 0.08 4
Figure 12. Differential Phase
85C
25C
-40C
5
6 7 8 9 POWER SUPPLY VOLTAGE (V)
10
11
Figure 13. Supply Current vs. Power Supply (Enabled)
Figure 14. Supply Current vs. Temperature (Disabled)
8 7.5 TRANSIMPEDANCE (W) 10 11 OUPUT VOLTAGE (VPP) 7 6.5 6 5.5 5 4.5 4 3.5 3 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 85C -40C 25C
1M 100k 10k 1k 100 10 1 0.01
0.1
1 10 100 FREQUENCY (MHz)
1000
10k
Figure 15. Output Voltage Swing vs. Supply Voltage
Figure 16. Transimpedance (ROL) vs. Frequency
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VS = 5V EN EN OUT VS = 5V
OUT
Output Signal: Squarewave, 10MHz, 2VPP
Output Signal: Squarewave, 10MHz, 2VPP
Figure 17. Turn ON Time Delay Vertical: (EN) 500mV/div (OUT) 1V/div Horizontal: 40ns/div
Figure 18. Turn OFF Time Delay Vertical: (EN) 500mV/div (OUT) 1V/div Horizontal: 40ns/div
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General Design Considerations
The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed-loop bandwidth depends on the value of the feedback resistor. The closed-loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 19.
10 5 0 -5 RF = 300 W RF = 400 W RF = 500 W RF = 600 W
use a current feedback amplifier with the output shorted directly to the inverting input.
Printed Circuit Board Layout Techniques
GAIN (dB)
Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16 is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4 are recommended.
Video Performance
-10 -15 -20 0.1 AV = +2 VCC = +5 V VEE = -5 V 1.0 10 100 1000 10000
FREQUENCY (MHz)
This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage.
ESD Protection
Figure 19. Frequency Response vs. RF
The -3.0 dB bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect.
Feedback and Gain Resistor Selection for Optimum Frequency Response
A current feedback operational amplifier's key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of 1% should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces X0.1 dB of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to
All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (see Figure 20). These diodes provide moderate protection to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed-loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed-loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. NOTE: Human Body Model for +IN and -IN pins are rated at 0.8kV while all other pins are rated at 2.0kV.
VCC
External Pin VEE
Internal Circuitry
Figure 20. Internal ESD Protection
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ORDERING INFORMATION
Device NCS2510SNT2 NCS2510SNT2G NCS2510D* NCS2510DR2* NCS2510DG* NCS2510DR2G* Package SOT23-6 (TSOP-6) SOT23-6 (TSOP-6) (Pb-Free) SO-8 SO-8 SO-8 (Pb-Free) SO-8 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel 98 Units/Rail 2500 Tape & Reel 98 Units/Rail 2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact ON Semiconductor for ordering information.
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NCS2510
PACKAGE DIMENSIONS
SO-8 D SUFFIX CASE 751-07 ISSUE AG
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
-X- A
8 5
B
1 4
S
0.25 (0.010)
M
Y
M
-Y- G C -Z- H D 0.25 (0.010)
M SEATING PLANE
K
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
DIM A B C D G H J K M N S
SOLDERING FOOTPRINT*
1.52 0.060
7.0 0.275
4.0 0.155
0.6 0.024
1.270 0.050
SCALE 6:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NCS2510
PACKAGE DIMENSIONS
SOT23-6 (TSOP-6) SN SUFFIX CASE 318G-02 ISSUE M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
A L
6 5 1 2 4 3
S
B
D G M 0.05 (0.002) H C K J
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.075
0.95 0.037 0.95 0.037
0.7 0.028 1.0 0.039
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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